Lee, Joo Young

Hello! Welcome to my home
 
Bruin OnLine

  mailbox LJY97@ee.ucla.edu

Curriculum Vitae

 

Recent Journal Publications

 

Jooyoung Lee, Huai-Chung Chen, Lih-Juann Chen, and Kang L. Wang,

"High Quality Heteroepitaxial Ge Growth on Nano-patterned Si Templates Using Diblock Copolymer Patterning,"

Journal of Crystal Growth (in press)

 

Jooyoung Lee, Mao-Nan Chang, and Kang L. Wang,

"Size Dependence of Hall Mobility and Dislocation Density in Ge Heteroepitaxial Layers Grown by MBE on a SiO2 Patterned Si Template,"

Microelectronics Journal, vol. 37, pp 1523-1527, 2006.

 

Jooyoung Lee, Hyungjun Kim, Mingqiang Bao, Kang L. Wang,

"Pattern Size Dependence of Si1-xGex Epitaxial Growth for High Mobility Device Applications,"

Thin Solid Films, vol. 508, Issues 1-2,  pp 10-13, June 2006.

 

Y.H. Kwon, T.W. Kang, C.J. Park, H.Y. Cho, T.W. Kim, J.Y. Lee, Kang, L. Wang, B.O. Kim, S.M. Kim, Y.H. Cho,

"Optical Properties and Deep Levels in Annealed Si1-xMnx Bulk Materials,"

Solid State Communications, vol. 140, pp 14-17, 2006.

 

Song Tong, Joo-Young Lee, Hyung-Jun Kim, Fei Liu, Kang L. Wang,

"Ge dot mid-infrared photodetectors,"

Optical Materials, vol. 27, pp 1097-1100, 2005.

 

 

Conference Presentations

 

Jooyoung Lee, Huai-Chung Chen, and Kang L. Wang (September, 2006),

"High quality heteroepitaxial Ge growth on nano-patterned Si template using diblock copolymer patterning,"

presented at the 14th international conference on molecular beam epitaxy (MBE 2006), Tokyo, Japan.

 

Jooyoung Lee, Mao-Nan Chang, and Kang L. Wang (April, 2006),

"Size dependence of Hall mobility and dislocation density in Ge heteroepitaxial layers grown by MBE on a SiO2 patterned Si template,"

presented at the 6th international workshop on ESPS-NIS (Epitaxial Semiconductors on Patterned Substrates and Novel Index Surfaces), Nottingham, UK.

 

Jooyoung Lee, Ming Bao, and Kang L. Wang (June, 2005),

"Enhanced Hall mobility and very low dislocation density in SiGe epitaxial layers grown by MBE,"

presented at the 2005 EMC (Electronic Materials Conference), Santa Barbara, California.

 

Jooyoung Lee, Hyung-jun Kim, Ming Bao, and Kang L. Wang (May, 2005),

"Pattern size dependence of SiGe epitaxial growth for high mobility device applications,"

presented at the 4th international conference on silicon epitaxy and heterostructures (ICSI4), Hyogo, Japan.

 

Jooyoung Lee, Hyung-jun Kim, Ming Bao, and Kang L. Wang (March, 2005),

"Size dependent Hall mobility in a high Ge content SiGe layer for MODFET structure,"

presented at the 2005 MRS (Material Research Society) spring meeting, San Francisco, California.